Citation:
For time-of-flight studies of high-field transport at the silicon/silicon dioxide interface and demonstration of long-term charge storage in wide-band gap semiconductors.
For time-of-flight studies of high-field transport at the silicon/silicon dioxide interface and demonstration of long-term charge storage in wide-band gap semiconductors.
IEEE Membership
IEEE Electron Devices Society Membership
Los Alamos/Northern New Mexico Section
IEEE Membership
IEEE Electron Devices Society Membership
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