Citation:
For contributions to physics of semiconductor devices used in three-dimensional integrated circuits, and low temperature silicon-germanium epitaxy using non-thermally-assisted chemical vapor deposition.
For contributions to physics of semiconductor devices used in three-dimensional integrated circuits, and low temperature silicon-germanium epitaxy using non-thermally-assisted chemical vapor deposition.
IEEE Membership
IEEE Electron Devices Society Membership
Central Texas Section
IEEE Membership
IEEE Electron Devices Society Membership
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